**HMC539LP3ETR: A High-Performance GaAs pHEMT MMIC Voltage-Controlled Oscillator from 9 to 5 GHz**

The **HMC539LP3ETR** represents a significant advancement in **monolithic microwave integrated circuit (MMIC)** technology, designed to meet the rigorous demands of modern RF systems. This voltage-controlled oscillator (VCO) operates across a **wide frequency range from 5 GHz to 9 GHz**, making it an indispensable component for applications such as **point-to-point radios, satellite communications, test equipment, and military electronics**.

Fabricated using a **high-reliability GaAs pseudomorphic High Electron Mobility Transistor (pHEMT)** process, this VCO delivers exceptional performance metrics. It features a **typical phase noise of -110 dBc/Hz at 100 kHz offset**, ensuring clean signal generation critical for high-fidelity communication links. The tuning voltage range of 0 to 13 V allows for precise frequency control, while the integrated output buffer amplifier provides robust **output power of +8 dBm** with excellent isolation from load variations.

Housed in a compact, surface-mount **3x3 mm LP3 leadless package**, the HMC539LP3ETR is engineered for seamless integration into space-constrained designs. Its single positive supply voltage operation (+5V) simplifies power management, enhancing overall system efficiency. Furthermore, the component is characterized by its **low harmonic output**, typically below -20 dBc, which minimizes interference and improves signal purity in complex RF architectures.

**ICGOOODFIND:** The HMC539LP3ETR stands out as a superior solution for broadband frequency generation, combining wide tuning bandwidth, low phase noise, and high output power in a miniature form factor. Its GaAs pHEMT design ensures high reliability and performance consistency, making it a preferred choice for advanced commercial and defense applications.

**Keywords:** Voltage-Controlled Oscillator, GaAs pHEMT, Phase Noise, MMIC, Wide Tuning Range