**HMC998APM5E: A 2 to 20 GHz GaAs pHEMT MMIC Power Amplifier for Broadband Wireless Systems**

The relentless demand for higher data rates and greater connectivity in modern communication, radar, and electronic warfare systems necessitates high-performance RF components capable of operating over extremely wide bandwidths. The **HMC998APM5E** stands out as a premier solution, a GaAs pseudomorphic High Electron Mobility Transistor (pHEMT) Monolithic Microwave Integrated Circuit (MMIC) power amplifier engineered to deliver exceptional performance from **2 to 20 GHz**.

This amplifier integrates two high-gain stages and one output power stage into a single, compact die, achieving a remarkable **small-signal gain of 22 dB** across its entire operational bandwidth. This high level of gain is critical for compensating for losses in complex system architectures and ensuring a strong output signal. A key feature of the HMC998APM5E is its outstanding **saturated output power (Psat)**, which typically reaches **+30 dBm (1 Watt)**. Furthermore, it delivers a high **output third-order intercept point (OIP3) of approximately 40 dBm**, underscoring its superior linearity and its ability to handle complex modulation schemes while minimizing distortion in multi-carrier applications.

The device is fabricated using a advanced GaAs pHEMT process, which is instrumental in achieving its wide bandwidth and high-frequency performance. It requires a single positive supply voltage ranging from +6V to +8V, simplifying power management design. The MMIC also incorporates on-chip bias networks and DC blocking capacitors, facilitating easier integration into larger systems. Its matched 50-Ohm input and output ports reduce the need for extensive external matching components, streamlining the board-level design process and saving valuable space.

The applications for such a versatile component are vast. It is ideally suited for use in **broadband wireless systems**, test and measurement equipment, microwave radios, and aerospace/defense platforms including radar jammers and electronic countermeasures (ECM) systems. Its wideband nature allows it to cover multiple octaves simultaneously, making it a valuable component for software-defined radios (SDRs) and systems that must operate across diverse frequency bands.

**ICGOOODFIND**: The HMC998APM5E is a state-of-the-art MMIC power amplifier that sets a high bar for wideband performance. Its combination of **exceptional bandwidth (2-20 GHz), high gain, and robust output power** makes it an indispensable component for next-generation RF and microwave systems where flexibility, linearity, and power are paramount.

**Keywords**: Wideband Power Amplifier, GaAs pHEMT, MMIC, High Linearity, Saturated Output Power.