Infineon IPP50R190CE: Advanced 190mΩ Power MOSFET for High-Efficiency Switching Applications
The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this need, the Infineon IPP50R190CE stands out as a benchmark in power MOSFET technology, engineered to deliver exceptional performance in a wide array of demanding applications.
This device is characterized by its ultra-low typical on-state resistance (RDS(on)) of just 190mΩ at a gate-source voltage of 10 V. This key parameter is critical, as it directly translates to minimized conduction losses. When a MOSFET is in its on-state, the primary source of power loss is the voltage drop across its drain-source channel, calculated as I²R. A lower RDS(on) means significantly less energy is wasted as heat, leading to cooler operation and a substantial boost in overall system efficiency.
Built on Infineon's proprietary advanced OptiMOS™ technology platform, the IPP50R190CE is a 500 V N-channel MOSFET. This high voltage rating makes it an ideal candidate for off-line switch-mode power supplies (SMPS), power factor correction (PFC) stages, motor control circuits, and industrial drives. The technology is renowned for its excellent switching performance, achieving an optimal balance between low switching losses and minimal gate charge (Qg). This balance is crucial for high-frequency operation, enabling designers to shrink the size of magnetic components like transformers and inductors, thereby increasing power density.
The component is offered in the TO-220 FullPAK package. This industry-standard package provides a mechanically robust solution with a fully isolated mounting hole, which simplifies the assembly process by eliminating the need for additional insulating hardware like sil-pads or mica washers. This not only reduces the bill of materials (BOM) and assembly time but also enhances the overall thermal performance and reliability of the system by providing a clear path for heat dissipation.
Designers will appreciate the exceptional body diode robustness, a hallmark of the OptiMOS™ family. This ruggedness ensures high reliability under harsh conditions, including during hard commutation events, making the MOSFET highly resistant to voltage spikes and other transient stresses commonly encountered in real-world applications.
In summary, the Infineon IPP50R190CE is a superior 500V power MOSFET that sets a high standard for efficiency and reliability. Its combination of an ultra-low 190mΩ RDS(on), fast switching capability enabled by OptiMOS™ technology, and a convenient isolated package makes it a top-tier choice for engineers aiming to maximize performance in high-efficiency switching power designs.
Keywords:
1. Power Efficiency
2. RDS(on)
3. OptiMOS™ Technology
4. Switching Applications
5. Thermal Performance
